Ana Lilia Leal Cruz (CV)

Grado: Doctor en Ciencias, en Ingeniería Metalúrgica y Cerámica, CINVESTAV, 2007.

SNI: Nivel I

Área de investigación: Procesamiento, propiedades, estructura y desempeño de micro y nanomateriales funcionales electrónicos y optoelectrónicos.

Publicaciones selectas:

• A. L. Leal-Cruz, A. Vera-Marquina, D. Berman-Mendoza, C. VillaVelazquez-Mendoza, I. E. Zaldívar-Huerta, L. A, García-Delgado, A. García-Juárez, R. Gómez-Fuentes, and A. G. Rojas-Hernández: Microstructural and optical characterizations of highly stable of CdS nanospheres via selective approach, Optical Materials Express,  Vol. 4 [1] (2014) pp. 129-141. (ISSN: 2159-3930). Impact Factor: 2.616.
• A. L. Leal-Cruz, M. I. Pech-Canul, E. Lara-Curzio, R. M. Trejo, and R. Peascoe: Selective synthesis and characterization of HYSYCVD-Si2N2O, Materials Chemistry and Physics, Vol. 114 [1] (2009), pp. 376-381 (ISSN: 0254-0584). Impact Factor: 2.072.
• A. L. Leal-Cruz and M. I. Pech-Canul: In situ synthesis of Si3N4 from Na2SiF6 as a silicon solid precursor, Materials Chemistry and Physics, Vol. 98-1 (2006), pp 27-33. (ISSN: 0254-0584). Impact Factor: 2.072.

Patentes:

• Silicon oxynitride or silicon nitride producing involves using fluorinated solid precursors of silicon and generating reactant chemical species such as silicon fluorides and silicon in-situ in reaction chamber.
  Patent Number: MX2008010025-A1
  Patent Assignee: CENT INVESTIGACION ESTUDIOS AVANZADOS
  Inventor(s): LEAL CRUZ A. L.; PECH CANUL, M. I.
• Production of silicon nitride (Si3N4) via solid precursors comprises in situ precursors generation with savings in cost, time and labor.
  Patent Number: MX2005010459-A2
  Patent Assignee: CENT INVESTIGACION & ESTUDIOS AVANZADOS
  Inventor(s): PECH CANUL M. I.; LEAL CRUZ, A. L.

​e-mail: aliz932@gmail.com; ana.leal@unison.mx